NXP Semiconductors BUK9604-40A,118 Configuration: Single Continuous Drain Current: 198 A Current - Continuous Drain (id) @ 25?° C: 75A Drain To Source Voltage (vdss): 40V Drain-source Breakdown Voltage: 40 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 128nC @ 5V Gate-source Breakdown Voltage: +/- 15 V Input Capacitance (ciss) @ Vds: 8260pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: D??Pak, TO-263 (2 leads + tab) Power - Max: 300W Power Dissipation: 300 W Rds On (max) @ Id, Vgs: 4 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.004 Ohms Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 40 V Gate-Source Breakdown Voltage: +/- 15 V Resistance Drain-Source RDS (on): 0.004 Ohms Fall Time: 306 ns Rise Time: 309 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 365 ns Part # Aliases: /T3 BUK9604-40A Other Names: 934056694118, BUK9604-40A /T3